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| UTC 2SB772L PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772L is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES *High current output up to 3A *Low saturation voltage *Complement to 2SD882L TO-92L 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25C, unless otherwise specified ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation( Ta=25C) Collector Current(DC) Collector Current(PULSE) Base Current Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Pc Ic Ic IB Tj TSTG VALUE -40 -30 -5 0.5 -3 -7 -0.6 150 -55 ~ +150 UNIT V V V W A A A C C ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain(note 1) SYMBOL TEST CONDITIONS VCB=-30V,IE=0 VEB=-3V,Ic=0 VCE=-2V,Ic=-20mA VCE=-2V,Ic=-1A Ic=-2A,IB=-0.2A Ic=-2A,IB=-0.2A VCE=-5V,Ic=-0.1A VCB=-10V,IE=0,f=1MHz MIN TYP MAX UNIT -1000 -1000 nA nA ICBO IEBO hFE1 hFE2 Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) Current Gain Bandwidth Product fT Output Capacitance Cob Note 1:Pulse test:PW<300s,Duty Cycle<2% 30 100 200 150 -0.3 -1.0 80 45 400 -0.5 -2.0 V V MHz pF UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R202-005,A UTC 2SB772L RANK RANGE PNP EPITAXIAL SILICON TRANSISTOR Q 100-200 P 160-320 E 200-400 CLASSIFICATION OF hFE2 TYPICAL PERFORMANCE CHARACTERISTICS Fig.1 Static characteristics 150 Fig.2 Derating curve of safe operating areas 12 Fig.3 Power Derating -Ic,Collector current(A) 1.6 1.2 -IB=6mA -IB=5mA 100 Power Dissipation(W) 150 200 - Ic Derating(%) -IB=9mA -IB=8MA -IB=7mA S/ b 8 0.8 lim ite d D pa si is -IB=4mA -IB=3mA -IB=2mA -IB=1mA 50 4 n tio 0.4 lim d ite 0 0 4 8 12 16 20 0 -50 0 50 100 0 -50 0 50 100 150 200 -Collector-Emitter voltage(V) Tc,Case Temperature(C) Tc,Case Temperature(C) Fig.4 Collector Output capacitance 3 10 3 10 Fig.5 Current gainbandwidth product 1 10 Fig.6 Safe operating area Ic(max),Pulse Ic(max),DC 10 mS 1m S S 1m 0. Output Capacitance(pF) FT(MHz), Current gainbandwidth product 2 10 IE=0 f=1MHz VCE=5V 2 10 -Ic,Collector current(A) 0 1 10 10 0 IB=8mA 1 10 1 10 -1 10 0 10 10 0 -1 10 -2 10 -3 10 0 10 -2 10 -1 10 -2 10 10 10 0 1 10 2 10 -Collector-Base Voltage(v) Ic,Collector current(A) Collector-Emitter Voltage Fig.7 DC current gain 3 10 4 10 Fig.8 Saturation Voltage VCE=-2V -Saturation Voltage(mV) DC current Gain,H FE 3 10 VBE(sat) 2 10 2 10 1 10 VCE(sat) 1 10 0 10 0 10 1 10 2 10 3 10 4 10 0 10 0 10 1 10 2 10 3 10 4 10 -Ic,Collector current(mA) -Ic,Collector current(mA) UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R202-005,A UTC 2SB772L PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R202-005,A |
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